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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICES HAVING INTERPOSER STRUCTURE AND METHODS THEREOF
Document Type and Number:
WIPO Patent Application WO/2021/068221
Kind Code:
A1
Abstract:
Embodiments of semiconductor devices and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first semiconductor structure, a second semiconductor structure, and an interposer structure vertically between the first and second semiconductor structures. The first semiconductor structure includes a plurality of logic process-compatible devices and a first bonding layer comprising a plurality of first bonding contacts. The second semiconductor structure includes an array of NAND memory cells and a second bonding layer comprising a plurality of second bonding contacts. The interposer structure includes a first interposer bonding layer having a plurality of first interposer contacts disposed at a first side of the interposer structure, and a second interposer bonding layer having a plurality of second interposer contacts disposed at a second side opposite of the first side of the interposer structure. The first interposer contacts is conductively connected to the second interposer contacts.

Inventors:
LIU JUN (CN)
Application Number:
PCT/CN2019/110708
Publication Date:
April 15, 2021
Filing Date:
October 12, 2019
Export Citation:
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Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L27/11578
Foreign References:
CN109075170A2018-12-21
CN109075170A2018-12-21
US20190081069A12019-03-14
US20160358865A12016-12-08
US20190088589A12019-03-21
US10304852B12019-05-28
US10354980B12019-07-16
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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