Title:
SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2021/066193
Kind Code:
A1
Abstract:
The present invention provides a semiconductor element which is provided with a porous layer that is not susceptible to a strain and is capable of achieving good semiconductor characteristics, while having excellent planarity. A semiconductor element which comprises a semiconductor film and a porous layer that is arranged on a first surface of the semiconductor film or on a second surface that is on the reverse side of the first surface, wherein the porosity of the porous layer is 10% or less.
Inventors:
IMAFUJI OSAMU (JP)
MATSUBARA YUSUKE (JP)
MATSUBARA YUSUKE (JP)
Application Number:
PCT/JP2020/037781
Publication Date:
April 08, 2021
Filing Date:
October 05, 2020
Export Citation:
Assignee:
FLOSFIA INC (JP)
International Classes:
H01L25/07; H01L21/28; H01L21/329; H01L25/18; H01L29/06; H01L29/24; H01L29/41; H01L29/47; H01L29/872
Domestic Patent References:
| WO2017002793A1 | 2017-01-05 |
Foreign References:
| JP2013518447A | 2013-05-20 | |||
| US20160197151A1 | 2016-07-07 | |||
| US20190074212A1 | 2019-03-07 | |||
| JP2005158846A | 2005-06-16 | |||
| JP2014072533A | 2014-04-21 | |||
| JP2018129500A | 2018-08-16 |
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