Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/075434
Kind Code:
A1
Abstract:
According to the present invention, a terminal cell (C11) is provided with: nano sheets (122a, 123a) which are respectively formed at the same positions as nano sheets (22a, 23a) in a Y-direction; and dummy gate wirings (143, 146) which respectively surround the peripheries of the nano sheets (122a, 123) in the Y-direction. Side surfaces on one side in the Y-direction of the nano sheets (22a, 122a) are respectively exposed from a gate wiring (41) and the dummy gate wiring (142). Side surfaces on one side in the Y-direction of the nano sheets (23a, 123a) are respectively exposed from a gate wiring (43) and the dummy gate wiring (146).

More Like This:
JPH07226435SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
JPH08181215LOGIC CIRCUIT AND METHOD OF POWER SUPPLY
JP2012160100DESIGN METHOD AND DESIGN DEVICE FOR SEMICONDUCTOR INTEGRATED CIRCUIT, AND PROGRAM
Inventors:
NAKAOKA YASUHIRO (JP)
Application Number:
PCT/JP2020/038662
Publication Date:
April 22, 2021
Filing Date:
October 13, 2020
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
SOCIONEXT INC (JP)
International Classes:
H01L21/82
Domestic Patent References:
WO2018025580A12018-02-08
WO2018003634A12018-01-04
WO2018074172A12018-04-26
Foreign References:
US20160111337A12016-04-21
JP2009016525A2009-01-22
JPH0567634A1993-03-19
Attorney, Agent or Firm:
MAEDA & PARTNERS (JP)
Download PDF:
View/Download PDF      PDF Help



 
Previous Patent: WATER-IN-OIL EMULSION COSMETIC

Next Patent: TRANSFER SHEET AND METHOD FOR PRODUCING MELAMINE DECORATIVE PANEL