Title:
SEMICONDUCTOR INTEGRATED CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2021/085436
Kind Code:
A1
Abstract:
Provided is a semiconductor integrated circuit comprising: a P-type substrate; an embedded insulating film provided on the substrate; a P-type active layer provided on the embedded insulating film; a cathode region formed in the active layer; a P-type impurity region formed around the cathode region in the active layer; an anode contact region formed around the P-type impurity region in the active layer; a groove formed around the anode contact region and reaching the embedded insulating film; and a cathode wire connected to the cathode region and intersecting the P-type impurity region.
Inventors:
SHIMA KENGO (JP)
KATAOKA YOSHIKAZU (JP)
ADACHI KAZUYA (JP)
KATAOKA YOSHIKAZU (JP)
ADACHI KAZUYA (JP)
Application Number:
PCT/JP2020/040319
Publication Date:
May 06, 2021
Filing Date:
October 27, 2020
Export Citation:
Assignee:
TOKAI RIKA CO LTD (JP)
International Classes:
H01L29/06; H01L21/329; H01L29/861; H01L29/868; H01L29/87
Foreign References:
| JPH05136436A | 1993-06-01 | |||
| JPH0216751A | 1990-01-19 | |||
| JP2013084903A | 2013-05-09 | |||
| JP2001144307A | 2001-05-25 |
Attorney, Agent or Firm:
TAIYO, NAKAJIMA & KATO (JP)
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