SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR

WIPO Patent Application WO/2021/179279

A1

A semiconductor light-emitting element. The semiconductor light-emitting element comprises: a light-transmitting substrate composed of a first material, the light-transmitting substrate having a first surface which comprises a first area and a second area; and a semiconductor light-emitting sequence which is stacked in the first area of the first surface of the light-transmitting substrate and comprises sequentially from the first surface: a first conductive type semiconductor layer, a light-emitting layer and a second conductive type semiconductor layer. The first area of the first surface of the light-transmitting substrate has a first surface area and a first projection area, the second area of the first surface of the light-transmitting substrate has a second surface area and a second projection area, and the ratio of the second surface area to the second projection area is larger than the ratio of the first surface area to the first projection area.

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CHEN GONG (CN)
HSU SHENG-HSIEN (CN)
LIN SU-HUI (CN)
PENG KANG-WEI (CN)
HONG LING-YUAN (CN)
HE MINYOU (CN)

PCT/CN2020/079155

September 16, 2021

March 13, 2020

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XIAMEN SANAN OPTOELECTRONICS CO LTD (CN)

H01L33/20; H01L33/10; H01L33/22

US20100140653A1	2010-06-10
CN110828628A	2020-02-21
CN107689407A	2018-02-13
CN103403886A	2013-11-20
CN102842659A	2012-12-26

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