Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/029227
Kind Code:
A1
Abstract:
Disclosed in embodiments of the present disclosure are a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises: a semiconductor substrate, a trench being arranged in the semiconductor substrate, and a gate being formed in the trench; and a doped layer located in the semiconductor substrate on the outer side of the trench. In a direction perpendicular to the semiconductor substrate, the doped layer comprises: a transition layer and an ion implantation layer located thereon. The doping concentration of the transition layer is less than that of the ion implantation layer. In a direction perpendicular to the semiconductor substrate, a top surface of the transition layer is not lower than a bottom surface of the gate.
Inventors:
LI XIONG (CN)
Application Number:
PCT/CN2021/131903
Publication Date:
March 09, 2023
Filing Date:
November 19, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L29/78; H01L21/336
Foreign References:
| CN108987282A | 2018-12-11 | |||
| CN112086454A | 2020-12-15 | |||
| CN107978629A | 2018-05-01 | |||
| CN105489607A | 2016-04-13 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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