Title:
SEMICONDUCTOR STRUCTURE, MANUFACTURING METHOD THEREFOR, AND MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/029400
Kind Code:
A1
Abstract:
Embodiments of the present disclosure relate to the field of semiconductors. Provided are a semiconductor structure, a manufacturing method therefor, and a memory. The semiconductor structure may at least comprise: multiple transistors arranged aligned in a row, said transistors sharing a same source plate, wherein channels of the transistors are on the source plate, and the lengthwise direction of the channels of the transistors is perpendicular to the surface of the source plate, the material of the channels comprising a monocrystalline semiconductor; multiple drain contact elements being electrically connected to the drains of the transistors, an even number of transistors sharing one same drain contact element; multiple magnetic tunnel junctions on the drain contact elements, the magnetic tunnel junctions being electrically connected to the drain contact elements in a one-to-one correspondence. The embodiments of the present disclosure are conducive to the improvement of the electrical performance of the semiconductor structure.
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Inventors:
WANG XIAOGUANG (CN)
ZENG DINGGUI (CN)
LI HUIHUI (CN)
CAO KANYU (CN)
ZENG DINGGUI (CN)
LI HUIHUI (CN)
CAO KANYU (CN)
Application Number:
PCT/CN2022/077730
Publication Date:
March 09, 2023
Filing Date:
February 24, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)
International Classes:
G11C11/16
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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