Title:
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME
Document Type and Number:
WIPO Patent Application WO/2023/035474
Kind Code:
A1
Abstract:
Provided in the embodiments of the present disclosure are a semiconductor structure and a method for forming same. The method for forming the semiconductor structure comprises: providing a substrate; forming, on the substrate, bit line contact holes distributed at intervals, and a bit line contact and a bit line structure, which are partially in contact with the bit line contact holes; forming a first insulation layer on surfaces of the substrate, the bit line contact holes, the bit line contact and the bit line structure, wherein the bit line contact holes are not completely filled with the first insulation layer; forming a second insulation layer on a surface of the first insulation layer that is located on the surface of the bit line contact and on part of the surface of the bit line structure; and forming a third insulation layer that covers the first insulation layer and the second insulation layer.
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Inventors:
LIU XIANG (CN)
Application Number:
PCT/CN2021/138488
Publication Date:
March 16, 2023
Filing Date:
December 15, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L27/108
Foreign References:
| US20150294923A1 | 2015-10-15 | |||
| CN112310080A | 2021-02-02 | |||
| CN105719998A | 2016-06-29 | |||
| CN108231773A | 2018-06-29 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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