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Patent Searching and Data


Title:
SEMICONDUCTOR STRUCTURE PARAMETER ACQUISITION METHOD, DETECTION STANDARD ACQUISITION METHOD AND DETECTION METHOD
Document Type and Number:
WIPO Patent Application WO/2022/156162
Kind Code:
A1
Abstract:
Provided are a semiconductor structure parameter acquisition method, a detection standard acquisition method and a detection method. The semiconductor structure parameter acquisition method comprises: acquiring a semiconductor structure, wherein the semiconductor structure comprises a substrate and capacitor supporting structures located on the substrate, a plurality of capacitor holes are provided in the capacitor supporting structures, and the capacitor holes penetrate the capacitor supporting structures in the thickness direction of the capacitor supporting structures; removing capacitor supporting structures at some heights; acquiring test patterns, wherein the test patterns are patterns exposed out of the tops of the remaining capacitor supporting structures; and acquiring, from the test patterns, the distance between capacitor holes at preset positions on the basis of a preset direction. The embodiments of the present application aim to provide a method for rapidly and accurately monitoring product anomalies.

Inventors:
LIU XINRAN (CN)
WANG CHUNYANG (CN)
ZHU CHANGLI (CN)
Application Number:
PCT/CN2021/106484
Publication Date:
July 28, 2022
Filing Date:
July 15, 2021
Export Citation:
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Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/66
Foreign References:
CN112908881A2021-06-04
CN103390569A2013-11-13
CN203850292U2014-09-24
US20070111341A12007-05-17
Attorney, Agent or Firm:
BEIJING LINKAW PATENT ATTORNEY LAW FIRM (CN)
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