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Patent Searching and Data


Title:
SENSOR ELEMENT FOR GAS SENSOR AND METHOD FOR FORMING PROTECTIVE LAYER ON SENSOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2021/124987
Kind Code:
A1
Abstract:
This sensor element comprises a distal end protective layer from one end part of an element substrate, which has at the one end part a gas inlet through which gas to be measured is introduced inside the element substrate, to a prescribed range of an outer peripheral part of the element substrate. The distal end protective layer has a structure in which laminated are an inner distal end protective layer in which there are coarse voids with sizes of 1 μm or greater in a matrix area comprising a skeleton structure formed from porous pieces having pores with pore diameters of 10 nm to 1 μm and an outer distal end protective layer that is provided so as to cover the inner distal end protective layer and has a smaller porosity than that of the inner distal end protective layer. The inner distal end protective layer has an overall porosity between 40% and 90% and a coarse void rate between 1% and 55%.

Inventors:
OGISO YUSUKE (JP)
KONDO YOSHIMASA (JP)
UENISHI KATSUNAO (JP)
Application Number:
PCT/JP2020/045674
Publication Date:
June 24, 2021
Filing Date:
December 08, 2020
Export Citation:
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Assignee:
NGK INSULATORS LTD (JP)
International Classes:
G01N27/41; G01N27/416; G01N27/419
Domestic Patent References:
WO2020144827A12020-07-16
WO2020065952A12020-04-02
Foreign References:
JP2012173146A2012-09-10
JP2017187482A2017-10-12
JP2012173147A2012-09-10
JP2020165813A2020-10-08
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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