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Title:
SiC SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/235629
Kind Code:
A1
Abstract:
Provided is an SiC semiconductor device comprising: an SiC semiconductor layer of a first conductivity type having a major surface; a source trench formed in the major surface and having a side wall and a bottom wall; a source electrode embedded in the source trench and having a side wall contact portion contacting an opening-side region of the source trench in the side wall of the source trench; a body region of a second conductivity type formed in a region of an upper layer portion of the major surface along the source trench; and a source region of the first conductivity type electrically connected to the side wall contact portion of the source electrode in the upper layer portion of the body region.

Inventors:
NAKANO YUKI (JP)
YAMAMOTO KENJI (JP)
MORI SEIGO (JP)
Application Number:
PCT/JP2020/020097
Publication Date:
November 26, 2020
Filing Date:
May 21, 2020
Export Citation:
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Assignee:
ROHM CO LTD (JP)
International Classes:
H01L21/8234; H01L21/336; H01L27/06; H01L29/06; H01L29/12; H01L29/78
Domestic Patent References:
WO2017126472A12017-07-27
WO2016006263A12016-01-14
WO2016175152A12016-11-03
Foreign References:
JP2018182313A2018-11-15
JP2017010975A2017-01-12
JP2018160594A2018-10-11
JP2019050412A2019-03-28
JP2014175314A2014-09-22
JP2014038988A2014-02-27
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
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