Title:
SiC SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/235629
Kind Code:
A1
Abstract:
Provided is an SiC semiconductor device comprising: an SiC semiconductor layer of a first conductivity type having a major surface; a source trench formed in the major surface and having a side wall and a bottom wall; a source electrode embedded in the source trench and having a side wall contact portion contacting an opening-side region of the source trench in the side wall of the source trench; a body region of a second conductivity type formed in a region of an upper layer portion of the major surface along the source trench; and a source region of the first conductivity type electrically connected to the side wall contact portion of the source electrode in the upper layer portion of the body region.
More Like This:
JP5259671 | Semiconductor device |
JP2009111222 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
JP2023108349 | SEMICONDUCTOR DEVICE |
Inventors:
NAKANO YUKI (JP)
YAMAMOTO KENJI (JP)
MORI SEIGO (JP)
YAMAMOTO KENJI (JP)
MORI SEIGO (JP)
Application Number:
PCT/JP2020/020097
Publication Date:
November 26, 2020
Filing Date:
May 21, 2020
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L21/8234; H01L21/336; H01L27/06; H01L29/06; H01L29/12; H01L29/78
Domestic Patent References:
WO2017126472A1 | 2017-07-27 | |||
WO2016006263A1 | 2016-01-14 | |||
WO2016175152A1 | 2016-11-03 |
Foreign References:
JP2018182313A | 2018-11-15 | |||
JP2017010975A | 2017-01-12 | |||
JP2018160594A | 2018-10-11 | |||
JP2019050412A | 2019-03-28 | |||
JP2014175314A | 2014-09-22 | |||
JP2014038988A | 2014-02-27 |
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
Download PDF:
Previous Patent: RESIN COMPOSITION FOR OPTICAL THREE-DIMENSIONAL MODELING
Next Patent: BRAKING CONTROL DEVICE
Next Patent: BRAKING CONTROL DEVICE