Title:
SIC SINGLE CRYSTAL, SIC WAFER, SIC SUBSTRATE, AND SIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2014/129137
Kind Code:
A1
Abstract:
A SiC single crystal includes, in a plane substantially parallel to a c-plane thereof, a region (A) in which edge dislocations having a Burgers vector (A) in a specific direction are unevenly distributed, and a region (B) in which basal plane dislocations having a Burgers vector (B) in a specific direction are unevenly distributed. The region (A) is located in a <1-100> direction with respect to a facet portion, while the region (B) is located in a <11-20> direction with respect to the facet portion. A SiC substrate is produced by cutting a SiC wafer from the SiC single crystal in a direction substantially parallel to the c-plane, and cutting the SiC substrate from the SiC wafer such that the SiC substrate mainly contains one of the region (A) and the region (B). A SiC device is fabricated using the SiC substrate.
Inventors:
GUNJISHIMA ITARU (JP)
KANZAWA YUSUKE (JP)
URAKAMI YASUSHI (JP)
KOBAYASHI MASAKAZU (JP)
KANZAWA YUSUKE (JP)
URAKAMI YASUSHI (JP)
KOBAYASHI MASAKAZU (JP)
Application Number:
PCT/JP2014/000650
Publication Date:
August 28, 2014
Filing Date:
February 07, 2014
Export Citation:
Assignee:
TOYOTA CHUO KENKYUSHO KK (JP)
DENSO CORP (JP)
SHOWA DENKO KK (JP)
DENSO CORP (JP)
SHOWA DENKO KK (JP)
International Classes:
H01L29/32; C30B23/00; C30B29/36; H01L29/04; H01L29/16
Domestic Patent References:
| WO2012157654A1 | 2012-11-22 |
Foreign References:
| US20120060751A1 | 2012-03-15 | |||
| JP2006225232A | 2006-08-31 | |||
| JP2012046377A | 2012-03-08 |
Attorney, Agent or Firm:
HATAKEYAMA, Fumio (2847-25 Minamiyama, Nagasaka-cho, Owariasahi-sh, Aichi 21, JP)
Download PDF: