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Title:
SILICON CARBIDE-BASED POROUS OBJECT, HONEYCOMB STRUCTURE, AND CATALYST SUPPORT OF ELECTRIC HEATING TYPE
Document Type and Number:
WIPO Patent Application WO/2012/128149
Kind Code:
A1
Abstract:
This silicon carbide-based porous object comprises silicon carbide particles, silicon metal, and an oxide phase, wherein the silicon carbide particles have been bonded to one another through the silicon metal and/or the oxide phase. The oxide phase comprises cordierite as the main component, and the porous object has a porosity concerning open voids of 10-40%. The porous object preferably comprises 50-80 wt.% silicon carbide, 15-40 wt.% silicon metal, and 1-25 wt.% cordierite. Furthermore, the porous object preferably has a volume resistivity of 1-80 Ωcm and a thermal conductivity of 30-70 W/m·K.

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Inventors:
TOMITA TAKAHIRO (JP)
MATSUSHIMA KIYOSHI (JP)
INOUE KATSUHIRO (JP)
KOBAYASHI YOSHIMASA (JP)
Application Number:
PCT/JP2012/056563
Publication Date:
September 27, 2012
Filing Date:
March 14, 2012
Export Citation:
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Assignee:
NGK INSULATORS LTD (JP)
TOMITA TAKAHIRO (JP)
MATSUSHIMA KIYOSHI (JP)
INOUE KATSUHIRO (JP)
KOBAYASHI YOSHIMASA (JP)
International Classes:
C04B35/565; B01J35/04; C04B38/00
Domestic Patent References:
WO2005009922A12005-02-03
Foreign References:
JP4307781B22009-08-05
JP4398260B22010-01-13
JP4307781B22009-08-05
JP4398260B22010-01-13
Other References:
See also references of EP 2687502A4
Attorney, Agent or Firm:
ITEC INTERNATIONAL PATENT FIRM (JP)
Patent business corporation Itec international patent firm (JP)
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Claims: