Title:
SILICON CARBIDE MOSFET DEVICE AND CELL STRUCTURE THEREOF
Document Type and Number:
WIPO Patent Application WO/2021/088232
Kind Code:
A1
Abstract:
A cell structure of a silicon carbide MOSFET device, comprising a first conductivity type drift region (3) located above a first conductivity type substrate (2). A main trench is provided in the surface of the first conductivity type drift region (3); a Schottky metal (4) is provided on the bottom and sidewalls of the main trench; a second conductivity type well region (7) is provided in the surface of the first conductivity type drift region (3) and around the main trench; a source region (8) is provided in the surface of the well region (7); a source metal (10) is provided above the source region (8); a gate insulating layer (6) and a gate (5) split into two parts are provided above the sides of the source region (8), the well region (7), and the first conductivity type drift region (3) close to the main trench.
Inventors:
WANG YAFEI (CN)
DAI XIAOPING (CN)
LI CHENGZHAN (CN)
TANG LONGGU (CN)
CHEN XIMING (CN)
WANG YANGANG (CN)
DAI XIAOPING (CN)
LI CHENGZHAN (CN)
TANG LONGGU (CN)
CHEN XIMING (CN)
WANG YANGANG (CN)
Application Number:
PCT/CN2019/128390
Publication Date:
May 14, 2021
Filing Date:
December 25, 2019
Export Citation:
Assignee:
ZHUZHOU CRRC TIMES SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L27/07; H01L29/47; H01L29/78
Foreign References:
| JPH09102602A | 1997-04-15 | |||
| CN1677687A | 2005-10-05 | |||
| CN109564942A | 2019-04-02 | |||
| US20190109228A1 | 2019-04-11 | |||
| CN102569401A | 2012-07-11 |
Attorney, Agent or Firm:
YUHONG INTELLECTUAL PROPERTY LAW FIRM (CN)
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