SILICON CARBIDE SCHOTTKY CLAMPED TRANSISTOR AND PREPARATION METHOD THEREFOR

WIPO Patent Application WO/2021/088186

A1

A silicon carbide Schottky clamped transistor, relating to the field of semiconductor devices. The silicon carbide Schottky clamped transistor comprises an N+-type substrate collector region (1); an N-type collector region (2) and a P-type base region (3) located in the N+-type substrate collector region (1); an N+-type emitter region (4) located in the P-type base region (3), wherein a P+-type base region contact region (5) is arranged in the N+-type emitter region (4); and oxide isolation layers (6), wherein the oxide isolation layers (6) are located on a side wall of the N+-type emitter region (4) and side walls of the P-type base region (3) and the N-type collector region (2). Further provided is a preparation method for the silicon carbide Schottky clamped transistor. The difficulty and the costs of the device preparation process are greatly reduced by using the characteristic that different oxidation rates of different crystal faces of silicon carbide lead to different phenomena in terms of forming contacts by means of Ni metal and N-type and P-type silicon carbide.

AORI GELI (CN)
LIU YANG (CN)
YE HUAIYU (CN)
ZHANG GUOQI (CN)

PCT/CN2019/123833

May 14, 2021

December 06, 2019

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SHENZHEN INST OF WIDE BANDGAP SEMICONDUCTORS (CN)

H01L29/73; H01L21/331

CN110752256A	2020-02-04
CN109887995A	2019-06-14
CN105957886A	2016-09-21
CN101855726A	2010-10-06
CN108110002A	2018-06-01
US20120097974A1	2012-04-26

BEIJING ZZFY INTELLECTUAL PROPERTY AGENCY LTD. (CN)

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