SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Title:

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Document Type and Number:

WIPO Patent Application WO/2015/015672

Kind Code:

A1

Abstract:

Provided is a silicon carbide semiconductor device that can effectively improve threshold voltage and a method for manufacturing such a silicon carbide semiconductor device. The silicon carbide semiconductor device is provided with the following: a drift layer (2) of a first conductivity type formed on a silicon carbide substrate (1); a plurality of well regions (3) of a second conductivity type formed at intervals from one another on a surface layer section of the drift layer (2); source regions (4) of the first conductivity type formed on part of surface layer sections of the well regions (3); a gate insulation film (5) formed on parts of the surfaces of the well regions (3) and the source regions (4); and a gate electrode (6) formed on the surface of the gate insulation film (5) so as to face end sections of the source regions (4) and the well regions (3). Furthermore, the gate insulation film (5) forms a first trap that has an energy level deeper than that of the end of the conductive band of silicon carbide in the regions bordering the well regions (3) and has a defect (10) that includes silicon/hydrogen bonds.

Inventors:

FURUHASHI MASAYUKI (JP)
MIURA NARUHISA (JP)

Application Number:

PCT/JP2014/001262

Publication Date:

February 05, 2015

Filing Date:

March 07, 2014

Export Citation:

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Assignee:

MITSUBISHI ELECTRIC CORP (JP)

International Classes:

H01L29/78; H01L21/336; H01L29/12

Domestic Patent References:

WO2011118101A1

2011-09-29

Foreign References:

JP2005277253A	2005-10-06
JP2011176158A	2011-09-08
JP2011091186A	2011-05-06
JPH1131691A	1999-02-02
JP2006269641A	2006-10-05
JP2005039138A	2005-02-10

Other References:

K. FUKUDA ET AL.: "Effect of oxidation method and post-oxidation annealing on interface properties of metal-oxide- semiconductor structures formed on n-type 4H-SiC C(000-1) face", APPLIED PHYSICS LETTERS, vol. 77, 2000, pages 866, XP012027220, DOI: doi:10.1063/1.1306649