Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/093465
Kind Code:
A1
Abstract:
According to the present invention, a silicon carbide semiconductor device is produced without lowering the off-state breakdown voltage. A silicon carbide semiconductor device according to the present invention is provided with: a second diffusion layer (9) of a second conductivity type, which is partially formed in the superficial layer of silicon carbide semiconductor layers (2, 3, 7) of a first conductivity type; a third diffusion layer (19) of the second conductivity type, which is formed in at least a part of the superficial layer of the second diffusion layer; and a fourth diffusion layer (11) of the first conductivity type, which is partially formed in the superficial layer of the third diffusion layer. The third diffusion layer is formed to be shallower than the second diffusion layer; the fourth diffusion layer is formed in the third diffusion layer when viewed in cross section; and the third diffusion layer is asymmetric with respect to the second diffusion layer.
Inventors:
YAMAMOTO FUMITOSHI (JP)
Application Number:
PCT/JP2018/041633
Publication Date:
May 16, 2019
Filing Date:
November 09, 2018
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/336; H01L21/265; H01L29/12; H01L29/78
Domestic Patent References:
| WO2016084141A1 | 2016-06-02 | |||
| WO2017081935A1 | 2017-05-18 | |||
| WO2016104264A1 | 2016-06-30 |
Foreign References:
| US20160141412A1 | 2016-05-19 | |||
| JP2004319964A | 2004-11-11 | |||
| JP2004207492A | 2004-07-22 | |||
| JP2004363515A | 2004-12-24 | |||
| JP2000514604A | 2000-10-31 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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