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Patent Searching and Data


Title:
SILICON WAFER POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2019/077687
Kind Code:
A1
Abstract:
This silicon wafer polishing method includes a final polishing step comprising a preliminary stage polishing step, and, thereafter, a finishing polishing step. The preliminary stage polishing step comprises first supplying, as the polishing solution, a first aqueous alkaline solution containing abrasive grains at a density of 1 × 1014/cm3 or greater then switching to supplying a second aqueous alkaline solution containing a water-soluble polymer and abrasive grains at a density of 5 × 1013/cm3 or lower. The finishing polishing step comprises supplying, as the polishing solution, a third aqueous alkaline solution containing a water-soluble polymer and abrasive grains at a density of 5 × 1013/cm3 or lower. In this manner, the occurrence not only of a PID, but also of scratches with slight differences in depth, can be suppressed.

Inventors:
MATSUDA SHUHEI (JP)
Application Number:
PCT/JP2017/037596
Publication Date:
April 25, 2019
Filing Date:
October 17, 2017
Export Citation:
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Assignee:
SUMCO CORP (JP)
International Classes:
H01L21/304; B24B1/00; B24B37/00
Domestic Patent References:
WO2010140671A12010-12-09
WO2012005289A12012-01-12
Foreign References:
JPH11140427A1999-05-25
JPH09102475A1997-04-15
Attorney, Agent or Firm:
SUGIMURA Kenji (JP)
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