Title:
SINGLE CRYSTAL GROWTH METHOD
Document Type and Number:
WIPO Patent Application WO/2020/044716
Kind Code:
A1
Abstract:
The present invention pertains to a single crystal growth method using the Czochralski method (CZ method) or the magnetic-field-applied CZ method (MCZ method), which comprises: a first step for melting a starting silicon material packed in a crucible to give a molten liquid; a second step for solidifying a part of the molten liquid to form a solidified layer; a third step for removing at least a part of the molten liquid in the state where the solidified layer coexists with the molten liquid; a fourth step for melting the solidified layer to give a molten liquid; and a fifth step for growing silicon single crystals from the molten liquid. Thus, a method for growing single crystals having a lowered impurity concentration, wherein the high-purification of a starting silicon material and the growth of the silicon single crystals are carried out with the use of one CZ pulling machine, is provided.
Inventors:
HOSHI RYOJI (JP)
MIHARA KEISUKE (JP)
SUGAWARA KOUSEI (JP)
MATSUMOTO SUGURU (JP)
MIHARA KEISUKE (JP)
SUGAWARA KOUSEI (JP)
MATSUMOTO SUGURU (JP)
Application Number:
PCT/JP2019/022847
Publication Date:
March 05, 2020
Filing Date:
June 10, 2019
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
C30B29/06; C30B15/00
Domestic Patent References:
| WO2010018831A1 | 2010-02-18 |
Foreign References:
| JPH10279392A | 1998-10-20 | |||
| JP2008297132A | 2008-12-11 | |||
| JP2010534614A | 2010-11-11 | |||
| JPH0672792A | 1994-03-15 | |||
| JP2018070426A | 2018-05-10 | |||
| JP2008195545A | 2008-08-28 |
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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