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Patent Searching and Data


Title:
SLURRY FOR CMP
Document Type and Number:
WIPO Patent Application WO/2015/019911
Kind Code:
A1
Abstract:
 The problem addressed by the present invention is to provide a slurry for CMP, with which it is possible to suppress polishing scratches and dishing, and to achieve a higher polishing speed and dispersion stability. This slurry for CMP is characterized in that the polishing particles used in the polishing material are particles having a core/shell structure comprising a core layer and a shell layer, the core layer (2) containing an oxide of at least one element selected from aluminum, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, germanium, zirconium, indium, tin, yttrium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, tungsten, bismuth, thorium and alkaline earth metals, and the shell layer (4) containing cerium oxide.

Inventors:
GOAN KAZUYOSHI (JP)
OKUYAMA OKUSHI (JP)
FUJITA MICHIYO (JP)
FUJIEDA YOICHI (JP)
Application Number:
PCT/JP2014/070028
Publication Date:
February 12, 2015
Filing Date:
July 30, 2014
Export Citation:
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Assignee:
KONICA MINOLTA INC (JP)
International Classes:
C09K3/14; B24B37/00; C09G1/02; H01L21/304
Foreign References:
JP2011530166A2011-12-15
JP2003277732A2003-10-02
JP2010177703A2010-08-12
JP2005175498A2005-06-30
JP2001110760A2001-04-20
JP2002356312A2002-12-13
Attorney, Agent or Firm:
KOYO INTERNATIONAL PATENT FIRM (JP)
Patent business corporation Mitsuaki international patent firm (JP)
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