Title:
SLURRY AND POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2020/065723
Kind Code:
A1
Abstract:
A slurry for polishing a carbon-containing silicon oxide, the slurry containing abrasive grains and a liquid medium, wherein the abrasive grains contain a first particle and a second particle in contact with the first particle, the second particle has a particle diameter smaller than a particle diameter of the first particle, the first particle contains cerium oxide, and the second particle contains a cerium compound.
Inventors:
IWANO TOMOHIRO (JP)
MATSUMOTO TAKAAKI (JP)
KUKITA TOMOMI (JP)
HASEGAWA TOMOYASU (JP)
MATSUMOTO TAKAAKI (JP)
KUKITA TOMOMI (JP)
HASEGAWA TOMOYASU (JP)
Application Number:
PCT/JP2018/035445
Publication Date:
April 02, 2020
Filing Date:
September 25, 2018
Export Citation:
Assignee:
HITACHI CHEMICAL CO LTD (JP)
International Classes:
H01L21/304; B24B37/00; C09K3/14
Domestic Patent References:
| WO2013125445A1 | 2013-08-29 |
Foreign References:
| JP2017110177A | 2017-06-22 | |||
| JP2011054906A | 2011-03-17 | |||
| JP2012238831A | 2012-12-06 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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