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Title:
SOLAR CELL AND METHOD FOR MANUFACTURING SOLAR CELL
Document Type and Number:
WIPO Patent Application WO/2021/010422
Kind Code:
A1
Abstract:
Provided is a solar cell in which characteristics degradation is suppressed. A back-contact solar cell 1 is provided with a first conductivity-type semiconductor layer 25 formed in a first region 7 on a back side of a semiconductor substrate 11, and a second conductivity-type semiconductor layer 35 formed in a second region 8 and the first region 7 on the back side of the semiconductor substrate 11. In the first region 7, the first conductivity-type semiconductor layer 25 and the second conductivity-type semiconductor layer 35 are stacked successively on the back side of the semiconductor substrate 11, with an intrinsic semiconductor layer 23 disposed between the layers and the back side. In the second region 8, the second conductivity-type semiconductor layer 35 is stacked on the back side of the semiconductor substrate 11 with the intrinsic semiconductor layer 23 therebetween. In a boundary region R between the first region 7 and the second region 8, an insulating layer 40, the first conductivity-type semiconductor layer 25, and the second conductivity-type semiconductor layer 35 are stacked successively on the back side of the with semiconductor substrate 11, with the intrinsic semiconductor layer 23 disposed between the layers and the back side. The insulating layer 40 is interposed between the first conductivity-type semiconductor layer 25 in the first region 7 and the second conductivity-type semiconductor layer 35 in the second region 8.

Inventors:
KONISHI KATSUNORI (JP)
NAKANO KUNIHIRO (JP)
Application Number:
PCT/JP2020/027527
Publication Date:
January 21, 2021
Filing Date:
July 15, 2020
Export Citation:
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Assignee:
KANEKA CORP (JP)
International Classes:
H01L31/0747
Domestic Patent References:
WO2014157521A12014-10-02
WO2014136715A12014-09-12
WO2015060432A12015-04-30
Foreign References:
US20110056545A12011-03-10
Attorney, Agent or Firm:
NIIYAMA Yuichi et al. (JP)
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