Title:
SOLID-STATE IMAGE SENSOR AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/153404
Kind Code:
A1
Abstract:
A solid-state image sensor (100) is provided with: a first photoelectric conversion unit; and a second photoelectric conversion unit (600). The first and second photoelectric conversion units (500, 600) are bonded at bonding surfaces facing each other and include: upper electrodes (502, 602); lower electrodes (508A, 608); photoelectric conversion films (504, 604); and storage electrodes (510, 610). The lower electrode (508A) of the first photoelectric conversion unit (500) is connected to a charge accumulation unit (314) via first via electrodes (460A, 460B) passing through a semiconductor substrate (300). The lower electrode (608) of the second photoelectric conversion unit (600) is connected to the charge accumulation unit (314) via a second electrode (673) provided on the bonding surface of the second photoelectric conversion unit (600), a first electrode (573) provided on the bonding surface of the first photoelectric conversion unit (500), a second via electrode (560) passing through the first photoelectric conversion unit (500), and the first via electrodes (460A, 460B).
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Inventors:
MURATA KENICHI (JP)
JOEI MASAHIRO (JP)
NAKAMURA YUTA (JP)
JOEI MASAHIRO (JP)
NAKAMURA YUTA (JP)
Application Number:
PCT/JP2021/001979
Publication Date:
August 05, 2021
Filing Date:
January 21, 2021
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L21/3205; H01L21/768; H01L23/522; H01L27/146; H01L27/30; H04N5/369; H04N5/3745
Domestic Patent References:
| WO2020017305A1 | 2020-01-23 | |||
| WO2018186192A1 | 2018-10-11 |
Foreign References:
| JP2011187565A | 2011-09-22 | |||
| JP2016033981A | 2016-03-10 | |||
| JP2019091733A | 2019-06-13 | |||
| JP2006032715A | 2006-02-02 |
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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