Title:
SOT-MRAM STORAGE UNIT AND SOT-MRAM MEMORY
Document Type and Number:
WIPO Patent Application WO/2020/192201
Kind Code:
A1
Abstract:
Provided in the present invention is a SOT-MRAM storage unit, comprising: a heavy metal wire used for providing spin orbit torque, two MTJ, and a diode, a bidirectional gate, and a transistor connected to each MTJ, the two ends of the heavy metal wire each being connected to a bit line, the two MTJ each being positioned on the upper surface of the heavy metal wire, the free layer of the MTJ being next to the heavy metal wire and the fixed layer being furthest from the heavy metal wire, the two MTJ being connected to the drain electrode of the transistor by means of the diode connected thereto, and the connecting direction of the two diodes being opposite; one end of the bidirectional gate is connected to the heavy metal wire, the connecting point being located at a position between the heavy metal wire and the two MTJ, and the other end of the bidirectional gate being connected to the drain electrode of the transistors; the gate electrode of the transistors is connected to a word line, and the source electrode of the transistor is connected to a source line. The present invention can reduce the area of the storage unit and increase storage density.
Inventors:
YIN BIAO (CN)
MENG HAO (CN)
MENG HAO (CN)
Application Number:
PCT/CN2019/127404
Publication Date:
October 01, 2020
Filing Date:
December 23, 2019
Export Citation:
Assignee:
ZHEJIANG HIKSTOR TECH CO LTD (CN)
International Classes:
G11C14/00
Foreign References:
| CN1534680A | 2004-10-06 | |||
| CN107039064A | 2017-08-11 |
Attorney, Agent or Firm:
BEIJING LTXT INTELLECTUAL PROPERTY LAW LLC (CN)
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