Title:
SPIN-ORBIT TORQUE MAGNETIC RANDOM ACCESS MEMORY UNIT, ARRAY, AND HAMMING DISTANCE CALCULATION METHOD
Document Type and Number:
WIPO Patent Application WO/2021/253826
Kind Code:
A1
Abstract:
A spin-orbit torque magnetic random access memory unit, an array, and a Hamming distance calculation method, the spin-orbit torque magnetic random access memory unit comprising: a magnetic tunnel junction, a first transistor and a second transistor, a drain electrode of the first transistor being connected to the bottom of the magnetic tunnel junction, and the sink electrode of the second transistor being connect to the top of the magnetic tunnel junction. The present invention, in full electric field conditions, makes possible definite spin magnetization flipping without an external magnetic field. At the same time, the invention has the feature of using a non-polar electric current to control resistance states. An array constituted by spin-orbit torque magnetic random access memory units, under peripheral circuit control, implements storage/computation-integrated XOR logic, and thus can be used in hardware implementations of reconstructible highly parallel computing, for example, in-memory Hamming weight and Hamming distance calculations.
Inventors:
XING GUOZHONG (CN)
LIN HUAI (CN)
WANG DI (CN)
LIU LONG (CN)
ZHANG FENG (CN)
XIE CHANGQING (CN)
LI LING (CN)
LIU MING (CN)
LIN HUAI (CN)
WANG DI (CN)
LIU LONG (CN)
ZHANG FENG (CN)
XIE CHANGQING (CN)
LI LING (CN)
LIU MING (CN)
Application Number:
PCT/CN2021/073065
Publication Date:
December 23, 2021
Filing Date:
January 21, 2021
Export Citation:
Assignee:
INST OF MICROELECTRONICS CAS (CN)
International Classes:
G11C11/16
Foreign References:
| CN112002722A | 2020-11-27 | |||
| US20130270661A1 | 2013-10-17 |
Attorney, Agent or Firm:
CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (CN)
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