Title:
SPUTTERING TARGET, TRANSPARENT CONDUCTIVE FILM, AND METHOD FOR PRODUCING THE SAME
Document Type and Number:
WIPO Patent Application WO/1999/045163
Kind Code:
A1
Abstract:
A sputtering target which can be applied to the DC sputtering method, used for stably forming a transparent conductive film having a resistivity of 10?-2¿ to 10?10¿ $g(V).cm, and is made of an oxide containing Zn, Al, and Y, and a transparent conductive film which has a resistivity of 10?-2¿ to 10?10¿ $g(V).cm and a low light absorption factor, and is made of an oxide containing Zn, Al, and Y are disclosed.
Inventors:
MITSUI AKIRA (JP)
Application Number:
PCT/JP1999/001046
Publication Date:
September 10, 1999
Filing Date:
March 04, 1999
Export Citation:
Assignee:
ASAHI GLASS CO LTD (JP)
MITSUI AKIRA (JP)
MITSUI AKIRA (JP)
International Classes:
C23C14/08; C23C14/34; H01L31/0224; H01L31/18; (IPC1-7): C23C14/34; H01L21/285; H01L21/203
Foreign References:
JPH06290641A | 1994-10-18 | |||
JPH0769715A | 1995-03-14 |
Other References:
See also references of EP 1063317A4
Attorney, Agent or Firm:
Ogawa, Toshiharu (Kanda-Higashimatsushitacho Chiyoda-ku Tokyo, JP)
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