Title:
STORAGE DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/009607
Kind Code:
A1
Abstract:
Provided is a storage device that reduces access time in data readout. The storage device includes a first layer, and a second layer which is located above the first layer. The first layer includes a readout circuit, and the second layer includes a first memory cell and a second memory cell. The readout circuit includes an Si transistor. The first memory cell and the second memory cell each include an OS transistor. The first memory cell is electrically connected to the readout circuit, and the second memory cell is electrically connected to the readout circuit. When a first current corresponding to first data held in the first memory cell flows from the readout circuit to the first memory cell, and a second current corresponding to second data held in the second memory cell flows from the readout circuit to the second memory cell, the readout circuit compares the amounts of current of the first current and the second current, and reads the first data.
Inventors:
YAKUBO YUTO (JP)
ISHIZU TAKAHIKO
ISHIZU TAKAHIKO
Application Number:
PCT/IB2020/056325
Publication Date:
January 21, 2021
Filing Date:
July 06, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
G11C11/4091; G11C7/06; G11C11/405; H01L21/8242; H01L27/108; H01L29/786
Domestic Patent References:
| WO2016181256A1 | 2016-11-17 | |||
| WO2013153853A1 | 2013-10-17 |
Foreign References:
| JP2018152152A | 2018-09-27 | |||
| JP2011192329A | 2011-09-29 | |||
| JPH029094A | 1990-01-12 | |||
| JPS6070591A | 1985-04-22 |
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