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Title:
STORAGE UNIT OF NEW LOW-POWER-CONSUMPTION STATIC RANDOM ACCESS MEMORY, AND USE THEREOF
Document Type and Number:
WIPO Patent Application WO/2021/057114
Kind Code:
A1
Abstract:
A storage unit of a new low-power-consumption static random access memory. The storage unit is characterized by comprising five word lines and four bit lines, wherein the five word lines are respectively a word line I, a word line II, a word line III, a word line IV and a word line V, and the four bit lines are respectively a bit line I, a bit line II, a bit line III and a bit line IV. Compared with the most advanced technology, the energy consumption of the structure is reduced to 24.5% of the original energy consumption, and the structure has the following advantages: the characteristic of a CMOS channel current and a gate voltage being in positive correlation is used, and the result of using a group of analog voltage values as gate voltages to drive an SRAM is at the same starting time, with the voltage analog value on the bit lines representing a result of multiplication.

Inventors:
WANG YUQI (CN)
HA YAJUN (CN)
Application Number:
CN2020/096479
Publication Date:
April 01, 2021
Filing Date:
June 17, 2020
Export Citation:
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Assignee:
UNIV SHANGHAI TECH (CN)
International Classes:
G11C11/418
Foreign References:
CN110970071A2020-04-07
CN110058839A2019-07-26
CN109784483A2019-05-21
CN105336363A2016-02-17
US20080259681A12008-10-23
Attorney, Agent or Firm:
SHANGHAI SHENHUI PATENT AGENT CO., LTD. (No.80 Caobao Road Xuhui District, Shanghai 5, CN)
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