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Patent Searching and Data


Title:
STRUCTURE AND METHOD FOR ISOLATION OF BIT-LINE DRIVERS FOR THREE-DIMENSIONAL NAND
Document Type and Number:
WIPO Patent Application WO/2021/072588
Kind Code:
A1
Abstract:
Embodiments of a three-dimensional (3D) memory device and fabrication methods are disclosed. In some embodiments, the 3D memory device includes a peripheral circuitry formed on a first substrate. The peripheral circuitry includes a plurality of peripheral devices on a first side of the first substrate, a first interconnect layer, and a deep-trench-isolation on a second side of the first substrate, wherein the first and second sides are opposite sides of the first substrate and the deep-trench-isolation is configured to provide electrical isolation between at least two neighboring peripheral devices. The 3D memory device also includes a memory array formed on a second substrate. The memory array includes at least one memory cell and a second interconnect layer, wherein the second interconnect layer of the memory array is bonded with the first interconnect layer of the peripheral circuitry, and the peripheral devices are electrically connected with the memory cells.

Inventors:
CHEN LIANG (CN)
LIU WEI (CN)
GAN CHENG (CN)
Application Number:
PCT/CN2019/110978
Publication Date:
April 22, 2021
Filing Date:
October 14, 2019
Export Citation:
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Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L25/065; H01L27/1157; H01L27/11573; H01L27/11578
Foreign References:
CN109155320A2019-01-04
CN109037224A2018-12-18
US20140061804A12014-03-06
US20160064533A12016-03-03
CN108428709A2018-08-21
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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