Title:
SUBSTRATE-PROCESSING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2018/199582
Kind Code:
A1
Abstract:
An apparatus for processing a capacitively coupled plasma substrate according to an embodiment of the present invention comprises: a process chamber which provides a vacuum-evacuated and sealed inner space; a gas inlet pipe connected to the process chamber so as to supply a process gas to the inside of the process chamber; a gas distribution part connected to the gas inlet pipe so as to inject the process gas introduced into the gas inlet pipe into the inner space; an impedance matching network which is disposed outside the process chamber, and which delivers RF power of an RF power supply to the gas distribution part; an RF connection line for connecting an output of the impedance matching network to the gas inlet pipe or the gas distribution part; and a shield plate which includes a ferromagnetic body, and through which at least one from among the RF connection line and the gas inlet pipe passes.
Inventors:
YOO KWANG SU (KR)
PARK TEUGKI (KR)
LEE YONG HYUN (KR)
CHONG CHEOL WOO (KR)
PARK TEUGKI (KR)
LEE YONG HYUN (KR)
CHONG CHEOL WOO (KR)
Application Number:
PCT/KR2018/004708
Publication Date:
November 01, 2018
Filing Date:
April 24, 2018
Export Citation:
Assignee:
JUSUNG ENG CO LTD (KR)
International Classes:
H01L21/02; H01J37/32; H01L21/205; H05H1/46
Foreign References:
| KR20120002795A | 2012-01-09 | |||
| KR20160078660A | 2016-07-05 | |||
| KR100714882B1 | 2007-05-04 | |||
| KR101313705B1 | 2013-10-01 | |||
| KR20150037137A | 2015-04-08 |
Attorney, Agent or Firm:
NURY PATENT LAW FIRM (KR)
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