Title:
SUBSTRATE PROCESSING DEVICE, EXHAUST DEVICE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2021/187425
Kind Code:
A1
Abstract:
Provided is a technology having a processing chamber for processing a substrate, a first gas supply unit for supplying a metal-containing gas into the processing chamber, a second gas supply unit for supplying a first oxygen-containing gas from inside the processing chamber, and an exhaust unit for discharging an exhaust gas containing a metal-containing gas component from inside the processing chamber, wherein the exhaust unit is provided with a gas exhaust pipe, a pump for discharging the interior of the processing chamber, an auxiliary pump for supporting the pump, and a trap unit which collects the metal-containing gas component by using plasma and is provided between the pump and the auxiliary pump.
Inventors:
YAMAZAKI HIROHISA (JP)
SUZAKI KENICHI (JP)
NAGATOMI YOSHIMASA (JP)
SUZAKI KENICHI (JP)
NAGATOMI YOSHIMASA (JP)
Application Number:
PCT/JP2021/010402
Publication Date:
September 23, 2021
Filing Date:
March 15, 2021
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/31; C23C16/44; H01L21/316
Foreign References:
| JP2013084561A | 2013-05-09 | |||
| JP2005109383A | 2005-04-21 | |||
| JP2008270508A | 2008-11-06 | |||
| JP2020033619A | 2020-03-05 | |||
| JP2019505096A | 2019-02-21 |
Attorney, Agent or Firm:
POLAIRE I.P.C. (JP)
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