Title:
SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2018/221166
Kind Code:
A1
Abstract:
A second gas discharge part 81 is provided closer to an axis line P1 than six support pins 13 installed around the axis line P1, and on the outer peripheral side of a substrate W, when the substrate W, which is held with a spin chuck 2, is viewed in plan view. The second gas discharge part 81, in addition to the discharge of gas by a first gas discharge part 65, discharges gas in the vicinity of the contact portion between the end of the substrate W and each of the six support pins 13. Namely, the second gas discharge part 81 discharges gas from near the support pins 13 to the vicinity of the contact portion between the end of the substrate W and the support pins 13, where the effect of suppression of entry is reduced and processing fluid might be expected to enter to the bottom surface of the substrate W. The flow of the gas from the first gas discharge part 65 is thereby intensified to a pinpoint, whereby the effect for suppressing entry of the processing fluid to the bottom surface of the substrate W can be improved.
Inventors:
FURUKAWA MASAAKI (JP)
TSUDA SHOTARO (JP)
NISHIDA TAKAYUKI (JP)
TSUDA SHOTARO (JP)
NISHIDA TAKAYUKI (JP)
Application Number:
PCT/JP2018/018358
Publication Date:
December 06, 2018
Filing Date:
May 11, 2018
Export Citation:
Assignee:
SCREEN HOLDINGS CO LTD (JP)
International Classes:
H01L21/304; H01L21/027; H01L21/683
Foreign References:
| JP2012195346A | 2012-10-11 | |||
| JP2017069263A | 2017-04-06 | |||
| JP2006019545A | 2006-01-19 | |||
| JPH11289002A | 1999-10-19 | |||
| US20140174657A1 | 2014-06-26 |
Attorney, Agent or Firm:
SUGITANI Tsutomu (JP)
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