Title:
SUBSTRATE STRIPPING METHOD AND EPITAXIAL WAFER
Document Type and Number:
WIPO Patent Application WO/2021/083304
Kind Code:
A1
Abstract:
A substrate stripping method and an epitaxial wafer, relating to the technical field of semiconductors. The method comprises: providing a substrate (1), the substrate (1) having a recess, and the recess being distributed on a first surface (1a) of the substrate (1); forming a hydrophilic layer (3) in the recess; forming, on the first surface (1a), an etching sacrificial layer (4) covering the first surface (1a), the etching sacrificial layer (4) and the recess defining a flowing space (A); growing an epitaxial layer (5) on the etching sacrificial layer (4); and soaking the etching sacrificial layer (4) and the substrate (1) in an etching liquid, and corroding the etching sacrificial layer (4) by means of the etching liquid until the epitaxial layer (5) is separated from the substrate (1). The method can rapidly and uniformly etch the etching sacrificial layer (4).
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Inventors:
HU HONGPO (CN)
DONG BINZHONG (CN)
LI PENG (CN)
WANG JIANGBO (CN)
DONG BINZHONG (CN)
LI PENG (CN)
WANG JIANGBO (CN)
Application Number:
PCT/CN2020/125103
Publication Date:
May 06, 2021
Filing Date:
October 30, 2020
Export Citation:
Assignee:
HC SEMITEK ZHEJIANG CO LTD (CN)
International Classes:
H01L21/683; H01L21/02; H01L33/22
Foreign References:
CN111081531A | 2020-04-28 | |||
CN104221170A | 2014-12-17 | |||
CN101432850A | 2009-05-13 | |||
CN108878598A | 2018-11-23 | |||
CN106688113A | 2017-05-17 | |||
US20180047627A1 | 2018-02-15 |
Attorney, Agent or Firm:
BEIJING SAN GAO YONG XIN INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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