SUBSTRATE TREATMENT DEVICE, PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, PROGRAM, AND RECORDING MEDIUM

WIPO Patent Application WO/2021/033461

A1

In order to enable increased thickness uniformity for film formed upon each substrate, when simultaneously treating a plurality of substrates, this substrate treatment device is configured so as to have: a substrate support tool that supports a plurality of substrates in the vertical direction; a reaction tube that houses the substrate holding tool holding the substrates; a vertical drive unit that puts the substrate holding tool into and takes same out from the inside of the reaction tube; a gas supply unit comprising a plurality of gas supply bodies corresponding to the plurality of substrates held by the substrate holding tool housed inside the reaction tube; an exhaust unit that discharges gas supplied by the gas supply unit, from the reaction tube; and a control unit configured so as to be capable of controlling a heating unit, the gas supply unit, and the vertical drive unit such that the height of the plurality of substrates relative to the plurality of gas supply bodies is adjusted in accordance with pre-set conditions and gas is supplied to the substrates.

HIRANO MAKOTO (JP)
TAKEBAYASHI YUJI (JP)

PCT/JP2020/027326

February 25, 2021

July 14, 2020

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KOKUSAI ELECTRIC CORP (JP)

H01L21/31; C23C16/455; H01L21/316; H01L21/318

WO2012026241A1

2012-03-01

JPH05198517A	1993-08-06
JP2008166321A	2008-07-17
JP2015177106A	2015-10-05
JP2007081365A	2007-03-29
JPH02152224A	1990-06-12
JP2011512031A	2011-04-14

POLAIRE I.P.C. (JP)

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