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Patent Searching and Data


Title:
SUBSTRATE TREATMENT METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SUBSTRATE TREATMENT DEVICE, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2022/138599
Kind Code:
A1
Abstract:
The present invention has a step for forming a film on a substrate by performing, a prescribed number of times, a cycle including: a step for supplying a raw material gas to a substrate in a treatment container; (b) a step for exciting a nitrogen and hydrogen containing gas to a plasma state and supplying the excited gas to the substrate in the treatment container; and (c) a step for exciting an inert gas to a plasma state and supplying the excited inert gas to the substrate in the treatment container, wherein the pressure in the treatment container in step (c) is lower than that in step (b).

Inventors:
TAIRA YUKI (JP)
TAKEDA TSUYOSHI (JP)
KADOSHIMA MASARU (JP)
Application Number:
PCT/JP2021/047165
Publication Date:
June 30, 2022
Filing Date:
December 21, 2021
Export Citation:
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Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
C23C16/42; H01L21/31; H01L21/318
Foreign References:
JP2019140146A2019-08-22
JP2013093551A2013-05-16
JP2018198288A2018-12-13
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
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