Title:
SUPER JUNCTION POWER DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/103094
Kind Code:
A1
Abstract:
A super junction power device, comprising at least one first MOSFET unit (200) and at least one second MOSFET unit (300). The first MOSFET unit (200) has different threshold voltages during turn on and turn off of the super junction power device; during reverse conduction of the super junction power device, reverse current can flow through the first MOSFET unit (200), which increases the reverse recovery speed of the super junction power device; the second MOSFET unit (300) has a shorter current channel than the first MOSFET unit (200), so that the chip size of the super junction power device can be effectively controlled. The super junction power device has a higher reverse recovery speed and a smaller chip size.
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Inventors:
GONG YI (CN)
YUAN YUANLIN (CN)
LIU WEI (CN)
LIU LEI (CN)
MAO ZHENDONG (CN)
YUAN YUANLIN (CN)
LIU WEI (CN)
LIU LEI (CN)
MAO ZHENDONG (CN)
Application Number:
PCT/CN2019/123318
Publication Date:
June 03, 2021
Filing Date:
December 05, 2019
Export Citation:
Assignee:
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L27/07; H01L29/78
Foreign References:
CN109755241A | 2019-05-14 | |||
CN103915439A | 2014-07-09 | |||
CN104821321A | 2015-08-05 | |||
CN106653752A | 2017-05-10 | |||
US20150349110A1 | 2015-12-03 |
Attorney, Agent or Firm:
BEYOND ATTORNEYS AT LAW (CN)
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