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Title:
SURFACE WAVE PLASMA PROCESSING DEVICE, MICROWAVE PLASMA SOURCE, AND MICROWAVE INTRODUCTION MECHANISM USED IN SAME
Document Type and Number:
WIPO Patent Application WO/2012/121289
Kind Code:
A1
Abstract:
This surface wave plasma processing device is provided with: a chamber (1); a gas supply mechanism (100) for supplying a gas into the chamber (1); and a microwave plasma source (2) which introduces microwaves into the chamber by means of a microwave introduction mechanism (41) and generates surface wave plasma with use of the gas that is supplied into the chamber (1). The microwave introduction mechanism (41) is provided with a waveguide (44) and an antenna unit (43) that has an antenna (81) for generating surface waves. The gas supply mechanism (100) is provided with: a gas supply source (101); a gas supply pipe (102) which supplies the gas from the gas supply source (101) to a portion of the antenna unit (43), said portion being closer to the front end than the antenna (81) for generating surface waves, through the inside of an inner conductor (53) of the waveguide (44); and a shower head which is provided on the antenna unit (43) at a position closer to the front end than the antenna (81) for generating surface waves and which has a plurality of gas ejection openings (106) through which the gas from the gas supply pipe (102) is ejected.

Inventors:
IKEDA TARO (JP)
OSADA YUKI (JP)
Application Number:
PCT/JP2012/055816
Publication Date:
September 13, 2012
Filing Date:
March 07, 2012
Export Citation:
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Assignee:
TOKYO ELECTRON LTD (JP)
IKEDA TARO (JP)
OSADA YUKI (JP)
International Classes:
H05H1/46; C23C16/455; C23C16/511; H01L21/205; H01L21/3065
Domestic Patent References:
WO2008153054A12008-12-18
WO2010004836A12010-01-14
WO2010110256A12010-09-30
Foreign References:
JP2011044567A2011-03-03
JP2003332326A2003-11-21
Attorney, Agent or Firm:
TAKAYAMA HIROSHI (JP)
Hiroshi Takayama (JP)
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Claims: