Title:
SWITCH FET BODY CURRENT MANAGEMENT DEVICES AND METHODS
Document Type and Number:
WIPO Patent Application WO/2022/035603
Kind Code:
A9
Abstract:
Methods and devices to reduce gate induced drain leakage current in RF switch stacks are disclosed. The described devices utilize multiple discharge paths and/or less negative body bias voltages without compromising non-linear performance and power handling capability of power switches. Moreover, more compact bias voltage generation circuits with smaller footprint can be implemented as part of the disclosed devices.
Inventors:
GENC ALPER (US)
SHAPIRO ERIC S (US)
SHAPIRO ERIC S (US)
Application Number:
PCT/US2021/043544
Publication Date:
April 14, 2022
Filing Date:
July 28, 2021
Export Citation:
Assignee:
PSEMI CORP (US)
International Classes:
H03K17/10; H03K17/693; H03K17/74
Attorney, Agent or Firm:
CASH, Brian J. et al. (US)
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