Title:
SWITCHING ELEMENT AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2020/145253
Kind Code:
A1
Abstract:
A switching element that has reduced switching voltage and leakage current and that demonstrates high reliability and low power consumption is achieved as a result of comprising: a first insulating layer in which first wiring mainly consisting of copper is embedded in a first wiring groove that opens upward; a second insulating layer which is formed on an upper surface of the first insulating layer and the first wiring and has an opening that reaches the first insulating layer and the first wiring; a first electrode which is the portion of the first wiring that is exposed from the opening; an oxygen supplying layer which is formed on an upper surface of the second insulating layer, generates oxygen plasma during etching to form the opening in the second insulating layer, and remains at least in the vicinity of the opening of the upper surface of the second insulating layer; an ion conducting layer which is formed on the upper surface of the first insulating layer and the first electrode that are exposed from the opening, an inner surface of the opening of the second insulating layer, and an upper surface of the oxygen supplying layer; and a second electrode that is formed on an upper surface of the ion conducting layer.
Inventors:
BANNO NAOKI (JP)
TADA MUNEHIRO (JP)
NUMATA HIDEAKI (JP)
OKAMOTO KOICHIRO (JP)
TADA MUNEHIRO (JP)
NUMATA HIDEAKI (JP)
OKAMOTO KOICHIRO (JP)
Application Number:
PCT/JP2020/000129
Publication Date:
July 16, 2020
Filing Date:
January 07, 2020
Export Citation:
Assignee:
NEC CORP (JP)
International Classes:
H01L45/00; H01L21/8239; H01L27/105; H01L49/00
Foreign References:
| JP2017107911A | 2017-06-15 | |||
| JP2015111712A | 2015-06-18 | |||
| JP2018174227A | 2018-11-08 | |||
| JP2013197561A | 2013-09-30 |
Attorney, Agent or Firm:
SHIMOSAKA Naoki (JP)
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