Title:
TFT SUBSTRATE, SCANNING ANTENNA PROVIDED WITH TFT SUBSTRATE, AND METHOD FOR PRODUCING TFT SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2019/013175
Kind Code:
A1
Abstract:
Provided is a method for producing a TFT substrate (101A) in which a source electrode (7S) and a drain electrode (7D) each include a lower source metal layer (S1) and an upper source metal layer (S2). The method for producing the TFT substrate includes: a step in which the upper source metal layer is formed by etching an upper conductive film (S2') using a first resist layer (81) as an etching mask; a step in which the lower source metal layer is formed by etching a lower conductive film (S1'); a step in which the first resist layer is removed, and a second resist layer (82) is formed so as to cover the upper source metal layer; and a step in which a source contact part (6S) and a drain contact part (6D) are formed by etching a contact layer (6) by way of dry etching, using the second resist layer as an etching mask.
Inventors:
MISAKI KATSUNORI
Application Number:
PCT/JP2018/025918
Publication Date:
January 17, 2019
Filing Date:
July 09, 2018
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
H01L21/336; H01L29/786; H01Q3/34; H01Q3/44; H01Q13/22; H01Q21/06
Domestic Patent References:
| WO2017115672A1 | 2017-07-06 | |||
| WO2017065255A1 | 2017-04-20 | |||
| WO2017065097A1 | 2017-04-20 | |||
| WO2017065088A1 | 2017-04-20 | |||
| WO2017061526A1 | 2017-04-13 | |||
| WO2017061527A1 | 2017-04-13 |
Foreign References:
| JP6139045B1 | 2017-05-31 |
Attorney, Agent or Firm:
OKUDA Seiji (JP)
Download PDF: