Title:
THIN FILM BULK ACOUSTIC RESONATOR AND FABRICATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/012923
Kind Code:
A1
Abstract:
Provided are a thin film bulk acoustic resonator and a fabrication method therefor, the method comprising: successively forming a first electrode layer, a piezoelectric material layer and a second electrode layer on a first substrate, then forming a support layer on the second electrode layer, forming in the support layer a cavity the top part of which is open, next binding the support layer and a second substrate, then removing the first substrate, and patterning the first electrode layer, the piezoelectric material layer and the second electrode layer to form a first electrode, a piezoelectric layer and a second electrode. The present invention achieves a cavity structure of a thin film bulk acoustic wave filter by means of etching a support layer as well as a binding process, which prevents the uniformity of the piezoelectric layer from being affected by micro-undulations between different mediums brought on due to a CMP process, while preventing the performance of the thin film bulk acoustic wave filter from being affected by the incomplete attenuation of a sacrificial layer.
Inventors:
YANG GUOHUANG (CN)
Application Number:
PCT/CN2020/099741
Publication Date:
January 28, 2021
Filing Date:
July 01, 2020
Export Citation:
Assignee:
NINGBO SEMICONDUCTOR INT CORP (CN)
International Classes:
H03H3/02; H03H9/17
Domestic Patent References:
| WO2008101646A1 | 2008-08-28 |
Foreign References:
| CN111130483A | 2020-05-08 | |||
| CN109309483A | 2019-02-05 | |||
| CN109150135A | 2019-01-04 | |||
| CN103296992A | 2013-09-11 | |||
| US6713314B2 | 2004-03-30 | |||
| CN102933318A | 2013-02-13 | |||
| CN106209003A | 2016-12-07 |
Attorney, Agent or Firm:
SHANGHAI SAVVY IP AGENCY CO., LTD. (CN)
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