Title:
THIN FILM-FORMING STARTING MATERIAL FOR ATOMIC LAYER DEPOSITION, METHOD FOR PRODUCING THIN FILMS, AND ALUMINUM COMPOUND
Document Type and Number:
WIPO Patent Application WO/2022/145267
Kind Code:
A1
Abstract:
The present invention is: a thin film-forming starting material for atomic layer deposition, wherein said starting material contains an aluminum compound as represented by general formula (1); a method for producing thin films that uses this starting material; and an aluminum compound. formula (1): (In the formula, R1 to R3 each independently represent an alkyl group having 1-5 carbon atoms or a fluorine atom-containing alkyl group having 1-5 carbon atoms, A1 represents an oxygen atom or an alkanediyl group having 1-5 carbon atoms, L1 represents a group given by general formulas (L-1) to (L-4), and n represents 1-3.) formula (2): (In the formula, R4 to R17 each independently represent a hydrogen atom, an alkyl group having 1-5 carbon atoms, or a fluorine atom-containing alkyl group having 1-5 carbon atoms, and * represents a bonding partner.)
Inventors:
YOSHINO TOMOHARU (JP)
ENZU MASAKI (JP)
NISHIDA AKIHIRO (JP)
ENZU MASAKI (JP)
NISHIDA AKIHIRO (JP)
Application Number:
PCT/JP2021/046947
Publication Date:
July 07, 2022
Filing Date:
December 20, 2021
Export Citation:
Assignee:
ADEKA CORP (JP)
International Classes:
C23C16/42; C07F5/06; C23C16/40; H01L21/31; H01L21/316
Domestic Patent References:
| WO2005035823A1 | 2005-04-21 | |||
| WO2014103588A1 | 2014-07-03 |
Foreign References:
| JP2008519459A | 2008-06-05 | |||
| US9390932B2 | 2016-07-12 | |||
| JP2003188171A | 2003-07-04 | |||
| JP2014005242A | 2014-01-16 | |||
| JP2013166965A | 2013-08-29 | |||
| JP2013145787A | 2013-07-25 |
Attorney, Agent or Firm:
SOGA, Michiharu et al. (JP)
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