Title:
THIN-FILM PIEZOELECTRIC RESONANCE DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2023/067902
Kind Code:
A1
Abstract:
The present disclosure provides a thin-film piezoelectric resonance device 10 comprising: a substrate 11 in which a vertically-penetrating opening part 11a is formed; and a multilayered structure 33 having a peripheral edge supported by the substrate. The multilayered structure includes a resonance part 20 composed of a front surface electrode 16, a rear surface electrode 15, and a piezoelectric thin-film 14 sandwiched by the front surface electrode and the rear surface electrode. The resonance part, when viewed in a plan view, is smaller than the opening part of the substrate and is located inside the opening part so as to be spaced apart from the ends of the opening part. The resonance frequency of the resonance part is higher than that around the resonance part. Also disclosed is a method for manufacturing the thin-film piezoelectric resonance device.
Inventors:
KOBAYASHI TAKESHI (JP)
ANDO AKIRA (JP)
ANDO AKIRA (JP)
Application Number:
PCT/JP2022/032702
Publication Date:
April 27, 2023
Filing Date:
August 31, 2022
Export Citation:
Assignee:
AIST (JP)
International Classes:
H03H9/17; H01L23/12; H03H3/02
Domestic Patent References:
| WO2021112214A1 | 2021-06-10 |
Foreign References:
| JP2005159402A | 2005-06-16 | |||
| JP2008236556A | 2008-10-02 | |||
| JP2005333619A | 2005-12-02 | |||
| JP2000332570A | 2000-11-30 | |||
| JP2010147871A | 2010-07-01 |
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