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Patent Searching and Data


Title:
THIN FILM SEMICONDUCTOR STRUCTURE, IMAGE SENSOR AND HANDHELD DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/068157
Kind Code:
A1
Abstract:
A thin film semiconductor structure (101), an image sensor (100) and a handheld device (600), wherein the thin film semiconductor structure (101) comprises a pixel (P11, P12, P21, P22), and comprises: a photodiode (102), which is used to convert light into a charge when an exposure operation is performed; and a source follower thin film transistor (106), a gate of which is coupled to one end of the photodiode (102); a current source (108), which is coupled to a source/drain of the source follower thin film transistor (106), when the current source (108) is turned on, the current source (108) supplies the current to the source follower thin film transistor (106), and when the current source (108) is turned off, the current source (108) does not supply the current to the source follower thin film transistor (106); and a capacitor (110), one end of which is coupled to the source/drain of the source follower thin film transistor (106); wherein the source follower thin film transistor (106) is used to change the charge in the capacitor according to the change of the charge in the photodiode (102) when the photodiode (102) is in the exposure operation.

Inventors:
YANG MENG-TA (CN)
Application Number:
PCT/CN2019/110338
Publication Date:
April 15, 2021
Filing Date:
October 10, 2019
Export Citation:
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Assignee:
SHENZHEN GOODIX TECH CO LTD (CN)
International Classes:
H04N5/369; H01L27/146
Foreign References:
CN109844951A2019-06-04
CN109068075A2018-12-21
CN108174124A2018-06-15
CN109791937A2019-05-21
CN203167114U2013-08-28
US20070041063A12007-02-22
Attorney, Agent or Firm:
TIANTAI LAW FIRM (CN)
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