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Patent Searching and Data


Title:
THIN FILM TRANSISTOR DRIVING DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2023/239182
Kind Code:
A1
Abstract:
The present invention relates to a driving device and a method for manufacturing same, the driving device comprising: a substrate; an insulating layer positioned on the substrate; a channel layer positioned on at least a portion of the insulating layer and including a metal oxide; and a source electrode and a drain electrode which are connected to the channel layer and positioned on the insulating layer to face each other on both sides of the channel layer, wherein the insulating layer comprises: a first insulating layer formed directly on the substrate; and a second insulating layer formed in the width direction at a certain height at the center of the upper surface of the first insulating layer, wherein the length of the second insulating layer is less than the length of the first insulating layer, stepped portions are formed on both sides of the second insulating layer, which respectively face the source electrode and the drain electrode, the stepped portions are spaced apart from the source electrode and the drain electrode in the longitudinal direction, and steps are formed in the channel layer due to the stepped portions.

Inventors:
LEE SOO YEON (KR)
LEE JIN KYU (KR)
Application Number:
PCT/KR2023/007876
Publication Date:
December 14, 2023
Filing Date:
June 08, 2023
Export Citation:
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Assignee:
SEOUL NAT UNIV R&DB FOUNDATION (KR)
International Classes:
H01L29/786; H01L29/66
Foreign References:
KR20070040128A2007-04-16
KR20100091108A2010-08-18
KR100429575B12004-07-27
KR20030069779A2003-08-27
JP5421357B22014-02-19
Attorney, Agent or Firm:
SUK, Sang Yong (KR)
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