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Title:
THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF, DISPLAY PANEL AND DISPLAY APPARATUS
Document Type and Number:
WIPO Patent Application WO/2021/134751
Kind Code:
A1
Abstract:
A method of fabricating a thin film transistor is disclosed. The method may comprise: providing a substrate (S10); forming an active layer and a layer of gate insulating material covering the active layer on the substrate (S20); forming a gate layer on a surface of the gate insulating layer opposite from the substrate (S30); forming a first photoresist pattern comprising a first photoresist on the gate layer (S40); forming a second photoresist pattern comprising a second photoresist on the first photoresist pattern (S50); performing a first etching of the gate layer to form a gate (S60); and performing a second etching of the layer of gate insulating material using the first photoresist pattern and the second photoresist pattern as a mask to form a gate insulating layer (S70); wherein the first photoresist (PR1) is different from the second photoresist (PR2).

Inventors:
LIU NING (CN)
WANG QINGHE (CN)
ZHANG YANG (CN)
LI GUANGYAO (CN)
SONG WEI (CN)
LI WEI (CN)
Application Number:
PCT/CN2020/070107
Publication Date:
July 08, 2021
Filing Date:
January 02, 2020
Export Citation:
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Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO LTD (CN)
International Classes:
H01L21/77; G03F7/16; H01L27/12
Foreign References:
CN109712930A2019-05-03
CN109075204A2018-12-21
CN109742029A2019-05-10
CN109256397A2019-01-22
CN110061064A2019-07-26
CN108493197A2018-09-04
KR20060064810A2006-06-14
CN107403826A2017-11-28
JPH08335687A1996-12-17
Attorney, Agent or Firm:
TEE & HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)
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