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Patent Searching and Data


Title:
THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, ARRAY SUBSTRATE, AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/223682
Kind Code:
A1
Abstract:
Provided are a thin-film transistor and a manufacturing method therefor, an array substrate, and a display device. The thin-film transistor comprises: a base substrate; a first gate located on one side of the base substrate; an active layer located on the side of the first gate distant from the base substrate; a second gate located on the side of the active layer distant from the base substrate; and a source-drain electrode located on the side of the second gate distant from the base substrate. The orthographic projection of the source-drain electrode on the base substrate at least partially overlaps the orthographic projection of the second gate on the base substrate.

Inventors:
WANG LING (CN)
LIN YICHENG (CN)
GAI CUILI (CN)
XU PAN (CN)
Application Number:
PCT/CN2019/087785
Publication Date:
November 28, 2019
Filing Date:
May 21, 2019
Export Citation:
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Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
International Classes:
H01L21/34; H01L29/786; H01L27/12
Foreign References:
CN108767016A2018-11-06
US20140340608A12014-11-20
US20140340608A12014-11-20
CN1934605A2007-03-21
CN104821339A2015-08-05
CN103280181A2013-09-04
Other References:
See also references of EP 3799132A4
Attorney, Agent or Firm:
CHINA PATENT AGENT (H.K.) LTD. (CN)
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