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Patent Searching and Data


Title:
THREE-DIMENSIONAL FLASH MEMORY AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2022/092583
Kind Code:
A1
Abstract:
Disclosed is a three-dimensional flash memory having a structure which includes an air gap, a method for manufacturing same, and a method for improving vertical hole defects in a three-dimensional flash memory. In order to form the air gap, a step for preparing a hole formed to extend in the vertical direction inside a channel layer, and a step for forming the air gap inside the channel layer by forming a cap that seals the top of the hole, are included. In addition, in order to improve vertical hole defects, a sacrificial film is deposited on an inner wall of at least one vertical hole so as to be filled by a spike generated on the inner wall of the at least one vertical hole, and while maintaining the sacrificial layer that is deposited on the spike, the sacrificial film that is deposited on the inner wall of the at least one vertical hole, excluding the spike, is removed.

Inventors:
SONG YUN HEUB (KR)
SONG CHANG EUN (KR)
Application Number:
PCT/KR2021/013143
Publication Date:
May 05, 2022
Filing Date:
September 27, 2021
Export Citation:
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Assignee:
IUCF HYU (KR)
PEDISEM CO LTD (KR)
International Classes:
H01L27/1157; G11C16/04; G11C16/08; G11C16/14; H01L27/11582; H01L27/1159; H01L27/11597
Foreign References:
KR20190005293A2019-01-16
KR20200085685A2020-07-15
JP2011249803A2011-12-08
US20160336340A12016-11-17
KR20200092576A2020-08-04
Attorney, Agent or Firm:
KIM, Jeong Hoon (KR)
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