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Title:
THREE-DIMENSIONAL FLASH MEMORY AND OPERATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2020/218809
Kind Code:
A1
Abstract:
A three-dimensional flash memory is disclosed. According to one embodiment, the three-dimensional flash memory has a structure in which a boosting area is reduced, a structure to which a small block is applied, a structure to which a COP is applied and in which a wiring process is simplified, or a structure to which symmetrical U-shaped BICs are applied.

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Inventors:
SONG YUN HEUB (KR)
Application Number:
PCT/KR2020/005296
Publication Date:
October 29, 2020
Filing Date:
April 22, 2020
Export Citation:
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Assignee:
SAMSUNG ELECTRONICS CO LTD (KR)
International Classes:
H01L27/11573; G11C16/08; G11C16/24; G11C16/26; G11C16/30; H01L27/11548; H01L27/11556; H01L27/1157; H01L27/11582; H01L29/792
Foreign References:
KR20190040880A2019-04-19
KR20130035553A2013-04-09
KR20180096877A2018-08-30
KR20170055069A2017-05-19
KR20170124019A2017-11-09
KR20160006866A2016-01-20
Attorney, Agent or Firm:
Y.P.LEE, MOCK & PARTNERS (KR)
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