Title:
THREE-DIMENSIONAL FLASH MEMORY USING FERROELECTRIC LAYER ON BASIS OF BACK GATE STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2022/059956
Kind Code:
A1
Abstract:
Disclosed is a three-dimensional flash memory using a ferroelectric layer on the basis of a back gate structure. According to an embodiment, a three-dimensional flash memory comprises: a plurality of word lines extending on a substrate in a horizontal direction and sequentially stacked; and a plurality of strings extending through the plurality of word lines on the substrate in one direction, each of the plurality of strings including a channel layer extending in the one direction and a ferroelectric layer extending in the one direction to surround the channel layer, wherein a back gate extending in the one direction and an insulating layer extending in the one direction to surround the back gate are disposed inside the channel layer, and the channel layer and the ferroelectric layer constitute a plurality of memory cells corresponding to the plurality of word lines, wherein the ferroelectric layer is formed of a ferroelectric material and used as a data storage by changing and maintaining the states of electric charges.
Inventors:
SONG YUN HEUB (KR)
Application Number:
PCT/KR2021/011384
Publication Date:
March 24, 2022
Filing Date:
August 25, 2021
Export Citation:
Assignee:
IUCF HYU (KR)
International Classes:
H01L27/11597; G11C16/04; G11C16/08; G11C16/26; H01L27/1159; H01L29/78
Foreign References:
| KR20170093099A | 2017-08-14 | |||
| US20180138194A1 | 2018-05-17 | |||
| KR20180113069A | 2018-10-15 | |||
| KR20190011632A | 2019-02-07 | |||
| US20190378858A1 | 2019-12-12 |
Other References:
SIM JAE-MIN, KIM BONG-SEOK, NAM IN-HO, SONG YUN-HEUB: "Gate All around with Back Gate NAND Flash Structure for Excellent Reliability Characteristics in Program Operation", ELECTRONICS, vol. 10, no. 15, pages 1828, XP055912452, DOI: 10.3390/electronics10151828
Attorney, Agent or Firm:
KIM, Jeong Hoon (KR)
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